Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3 /InAlN/GaN heterostructures
Identifieur interne : 004930 ( Main/Repository ); précédent : 004929; suivant : 004931Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3 /InAlN/GaN heterostructures
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Abstract
The Ni/Al2O3/InAlN/AlN/GaN metal-oxide-semiconductor heterostructure (MOS-H) is investigated using capacitance-voltage and capacitance-time characteristics in the temperature range of 25-300 °C. An anomalous positive voltage shift of the capacitance-voltage curve with increasing temperature was observed and attributed to the hole emission from the oxide/semiconductor interface states. Distribution of the interface states density, Dit(E), at the Al2O3/InAlN interface was evaluated using a modification of the constant-capacitance deep-level transient spectroscopy. The MOS-H capacitor threshold voltage shift under negative bias was repetitively recorded as a function of time at elevated temperatures. Dit in the range of 0.1-3 x 1013 eV-1 cm-2 was determined.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al<sub>2</sub>O<sub>3</sub> /InAlN/GaN heterostructures</title><author><name sortKey="Tapajna, M" uniqKey="Tapajna M">M. Tapajna</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1><s2>Bratislava</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>Bratislava</wicri:noRegion></affiliation></author><author><name sortKey="Cico, K" uniqKey="Cico K">K. Cico</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1><s2>Bratislava</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>Bratislava</wicri:noRegion></affiliation></author><author><name sortKey="Kuzmik, J" uniqKey="Kuzmik J">J. Kuzmik</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1><s2>Bratislava</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>Bratislava</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7</s1><s2>1040 Vienna</s2><s3>AUT</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Autriche</country><wicri:noRegion>1040 Vienna</wicri:noRegion></affiliation></author><author><name sortKey="Pogany, D" uniqKey="Pogany D">D. Pogany</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7</s1><s2>1040 Vienna</s2><s3>AUT</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Autriche</country><wicri:noRegion>1040 Vienna</wicri:noRegion></affiliation></author><author><name sortKey="Pozzovivo, G" uniqKey="Pozzovivo G">G. Pozzovivo</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7</s1><s2>1040 Vienna</s2><s3>AUT</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Autriche</country><wicri:noRegion>1040 Vienna</wicri:noRegion></affiliation></author><author><name sortKey="Strasser, G" uniqKey="Strasser G">G. Strasser</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7</s1><s2>1040 Vienna</s2><s3>AUT</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Autriche</country><wicri:noRegion>1040 Vienna</wicri:noRegion></affiliation></author><author><name sortKey="Carlin, J F" uniqKey="Carlin J">J.-F. Carlin</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Quantum Electronics and Photonics, EPFL</s1><s2>1015 Lausanne</s2><s3>CHE</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><placeName><settlement type="city">Lausanne</settlement><region nuts="3" type="region">Canton de Vaud</region></placeName></affiliation></author><author><name sortKey="Grandjean, N" uniqKey="Grandjean N">N. Grandjean</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Institute of Quantum Electronics and Photonics, EPFL</s1><s2>1015 Lausanne</s2><s3>CHE</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><placeName><settlement type="city">Lausanne</settlement><region nuts="3" type="region">Canton de Vaud</region></placeName></affiliation></author><author><name sortKey="Frohlich, K" uniqKey="Frohlich K">K. Fröhlich</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1><s2>Bratislava</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>9 aut.</sZ></inist:fA14><country>Slovaquie</country><wicri:noRegion>Bratislava</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">09-0243480</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 09-0243480 INIST</idno><idno type="RBID">Pascal:09-0243480</idno><idno type="wicri:Area/Main/Corpus">005621</idno><idno type="wicri:Area/Main/Repository">004930</idno></publicationStmt><seriesStmt><idno type="ISSN">0268-1242</idno><title level="j" type="abbreviated">Semicond. sci. technol.</title><title level="j" type="main">Semiconductor science and technology</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium Indium Nitrides Mixed</term><term>Aluminium oxide</term><term>Band structure</term><term>CV characteristic</term><term>Charge carrier generation</term><term>DLTS</term><term>Gallium nitride</term><term>Heterostructures</term><term>Interface electron state</term><term>MOS structure</term><term>Nickel</term><term>Threshold voltage</term><term>Time dependence</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Caractéristique capacité tension</term><term>Génération porteur charge</term><term>Etat électronique interface</term><term>Structure bande</term><term>DLTS</term><term>Tension seuil</term><term>Dépendance temps</term><term>Aluminium Indium Nitrure Mixte</term><term>Structure MOS</term><term>Nickel</term><term>Oxyde d'aluminium</term><term>Nitrure de gallium</term><term>Hétérostructure</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Nickel</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The Ni/Al<sub>2</sub>O<sub>3</sub>/InAlN/AlN/GaN metal-oxide-semiconductor heterostructure (MOS-H) is investigated using capacitance-voltage and capacitance-time characteristics in the temperature range of 25-300 °C. An anomalous positive voltage shift of the capacitance-voltage curve with increasing temperature was observed and attributed to the hole emission from the oxide/semiconductor interface states. Distribution of the interface states density, D<sub>it</sub>(E), at the Al<sub>2</sub>O<sub>3</sub>/InAlN interface was evaluated using a modification of the constant-capacitance deep-level transient spectroscopy. The MOS-H capacitor threshold voltage shift under negative bias was repetitively recorded as a function of time at elevated temperatures. D<sub>it</sub> in the range of 0.1-3 x 10<sup>13</sup> eV<sup>-1</sup> cm<sup>-2</sup> was determined.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0268-1242</s0></fA01><fA02 i1="01"><s0>SSTEET</s0></fA02><fA03 i2="1"><s0>Semicond. sci. technol.</s0></fA03><fA05><s2>24</s2></fA05><fA06><s2>3</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al<sub>2</sub>O<sub>3</sub> /InAlN/GaN heterostructures</s1></fA08><fA11 i1="01" i2="1"><s1>TAPAJNA (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>CICO (K.)</s1></fA11><fA11 i1="03" i2="1"><s1>KUZMIK (J.)</s1></fA11><fA11 i1="04" i2="1"><s1>POGANY (D.)</s1></fA11><fA11 i1="05" i2="1"><s1>POZZOVIVO (G.)</s1></fA11><fA11 i1="06" i2="1"><s1>STRASSER (G.)</s1></fA11><fA11 i1="07" i2="1"><s1>CARLIN (J.-F.)</s1></fA11><fA11 i1="08" i2="1"><s1>GRANDJEAN (N.)</s1></fA11><fA11 i1="09" i2="1"><s1>FRÖHLICH (K.)</s1></fA11><fA14 i1="01"><s1>Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9</s1><s2>Bratislava</s2><s3>SVK</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>9 aut.</sZ></fA14><fA14 i1="02"><s1>Institute for Solid State Electronics, Vienna University of Technology, Floragasse 7</s1><s2>1040 Vienna</s2><s3>AUT</s3><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="03"><s1>Institute of Quantum Electronics and Photonics, EPFL</s1><s2>1015 Lausanne</s2><s3>CHE</s3><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA20><s2>035008.1-035008.5</s2></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21041</s2><s5>354000187314070090</s5></fA43><fA44><s0>0000</s0><s1>© 2009 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>22 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>09-0243480</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Semiconductor science and technology</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>The Ni/Al<sub>2</sub>O<sub>3</sub>/InAlN/AlN/GaN metal-oxide-semiconductor heterostructure (MOS-H) is investigated using capacitance-voltage and capacitance-time characteristics in the temperature range of 25-300 °C. An anomalous positive voltage shift of the capacitance-voltage curve with increasing temperature was observed and attributed to the hole emission from the oxide/semiconductor interface states. Distribution of the interface states density, D<sub>it</sub>(E), at the Al<sub>2</sub>O<sub>3</sub>/InAlN interface was evaluated using a modification of the constant-capacitance deep-level transient spectroscopy. The MOS-H capacitor threshold voltage shift under negative bias was repetitively recorded as a function of time at elevated temperatures. D<sub>it</sub> in the range of 0.1-3 x 10<sup>13</sup> eV<sup>-1</sup> cm<sup>-2</sup> was determined.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C21A</s0></fC02><fC02 i1="02" i2="3"><s0>001B70C40Q</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Caractéristique capacité tension</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>CV characteristic</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Génération porteur charge</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Charge carrier generation</s0><s5>04</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Generación portador carga</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Etat électronique interface</s0><s5>05</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Interface electron state</s0><s5>05</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Estado electrónico interfase</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Structure bande</s0><s5>06</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Band structure</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>DLTS</s0><s5>08</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>DLTS</s0><s5>08</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Tension seuil</s0><s5>09</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Threshold voltage</s0><s5>09</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Dépendance temps</s0><s5>10</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Time dependence</s0><s5>10</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Aluminium Indium Nitrure Mixte</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Aluminium Indium Nitrides Mixed</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Mixto</s0><s2>NC</s2><s2>NA</s2><s5>11</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Structure MOS</s0><s5>15</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>MOS structure</s0><s5>15</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Estructura MOS</s0><s5>15</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Nickel</s0><s2>NC</s2><s5>16</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Nickel</s0><s2>NC</s2><s5>16</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Oxyde d'aluminium</s0><s5>17</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Aluminium oxide</s0><s5>17</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Aluminio óxido</s0><s5>17</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>18</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>18</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>18</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Hétérostructure</s0><s5>19</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Heterostructures</s0><s5>19</s5></fC03><fN21><s1>182</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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